Sɛptɛmba 18, 2022
Intanɛt rɛsistɛns tɛst de gi di bɛst ritɔn pan invɛstmɛnt pan bateri mentenɛns. I nɔ nid fɔ shutdown di sistem, nɔ nid fɔ dischaj ikwipmɛnt, ɛn i de kɔmplit wan ful bateri asɛsmɛnt insay minit. Dis atikul de analayz di mεkanism we de link intanεt rεsistεns to batri ol, εn aw rεsistεns data de εnabl prεdiktiv mεntenans.
Fɔ no di valyu we intanɛnt rɛsistɛns tɛst gɛt, pɔsin fɔ ɔndastand fɔs wetin intanɛnt rɛsistɛns rili bi di bateri. I nɔto wan fizik kwantiti bɔt na kɔmpɔzit we gɛt bɔku bɔku komponent dɛn叠加 frɔm difrɛn fizik prɔses dɛn.
Fɔs na ohmik rɛsistɛns, we dɛn kin kɔl bak DC intanɛnt rɛsistɛns, we kin kɔmɔt frɔm di rɛsistiviti fɔ ilɛktrɔd matirial, ayɔn kɔnduktiviti fɔ di ilɛktrɔlayt, ɛn kɔntakt rɛsistɛns na ilɛktrɔd-kɔrɛnt kɔlektor intafɛs. Ohmic resistance de ansa fastest — di initial vכltεj dכp we dεn aplay lod de kכmכt fכs frכm ohmic resistance. I de rayz sloslo wit ol as di ilektroyd matirial dεm de granul εn di kכlekt kכlekt dεm de kכrod.
Sɛkɔn na ilɛktrɔkɛmikɛl polarizeshɔn rɛsistɛns, frɔm di kaynɛtik rɛsistɛns fɔ rɛdɔks riakshɔn dɛn na ilɛktrɔd sɔfays. we dεn de dischaj, aktv mεtirial dεm na di εlektrod dεm de כnda כksidεshכn-rεdukshכn riakshכn dεm we gεt aktibכshכn εnεji barεri. Polarization resistance de bil op smɔl smɔl afta lod aplikeshɔn ɛn stebul na stedi stet. i de rayz wit ol as di aktv mεtirial de lכs εn di riakshכn sεf εria de shrink.
Tכd na kכnsantreshכn polarizeshכn rεsistεns, frכm kכnsantreshכn grεdiεnt dεm na di εlektrolayt nia εlektrod sεf dεm. we dεn de dischaj, dεn de kכnsכm aktv ayכn dεm na di εlektrod dεm; if ilektrolayt mas tכnfכs nכ kin kip כp, di εlektrod sεf kכnsantreshכn de kכnsantreshכn frכm di bכl, we de mek adishכnal vכltεj dכp. Konsentrashכn polarizeshכn na signifyant כnli pan ay dischaj rεt εn nεglijibl pan lכw rεt.
Fɔs na kɔntakt rɛsistɛns, inklud wɛld jɔyn bitwin tab ɛn plet, sil bitwin bateri kɔva ɛn tɛminal, ɛn ɛksternal kɔnɛkshɔn (bɔlt, bɔsba). Kontakt rεsistεns na rili stebul כlsay na di layf bכt i kin spik wan wan we kכnεkshכn dεm lכs כ kכrod — we na di εksakכt aw intanεt rεsistεns tεst de dεtekt kכnεkshכn fכlt.
כndastand dεn fכ kכmכpכnt dεm ya impɔtant biכs intanεt rεsistεns tεst gεt difrεn sεnsitiviti to difrεn εj stej dεm. Ohmic resistance na di mכst sεnsitiv to di εli ol; polarizeshɔn rεsistεns to mid-stej εj; konsantreshכn polarizeshכn nכmכ de mata pan ay rεt. dis min se intanεt rεsistεns tεst na di bεst suit fכ dεtekt εli εn mid-stej εj, εn less dayrεkt fכ fainal stej kapasiti dεklin.
Battery aging features simultaneous capacity fade ɛn internal resistance rise, bɔt di tu nɔ de go bifo pan di sem tɛmlayn. insay di fכs 60-70% fכ layf, di kapasiti fεd de rili slo we di intanεt rεsistεns de sho inkrεs we dεn kin mכsu. insay di las 30% pan di layf, di kapasiti de aksεlεrayt dכn we di rεsistεns dεn dכn כlrεdi hכy. Dis tɛm gap na di kɔr valyu fɔ intanɛnt rɛsistɛns tɛst as prɛdiktiv mentenɛns tul.
Tek wan tipik 2V telekom bateri wit 10-15 ia flot-layf dizayn. insay di fכs 5-7 ia, di kapasiti kin dכn כnli frכm 100% to 90%+ — di mεntenans pipul dεm kin izi fכ kכnklud se di batri stil hεlty. Bɔt insay da sem tɛm de, di intanɛnt rɛsistɛns kin dɔn ɔlrɛdi dɛbul ɔ mɔ frɔm di faktri valyu we na lɛk 20 mΩ to 40-50 mΩ. If atɛnshɔn nɔmɔ dɛn kin trig we di kapasiti de drɔp we pɔsin kin si (dɔwn 80% SOH), di bɛst riplesmɛnt winda dɔn ɔlrɛdi pas — di bateri stil de wok bɔt i dɔn go insay aksɛleret dɛklin ɛn i kin fel di tɛm we di nɛks ɔt.
wan sεkכn advantej fכ intanεt rεsistεns tεst na fכ no sכft imbalans. Insay wan singl bateri string, if wan sɛl sho mɔ pas 30% ay rɛsistɛns pas di grup avɛrej — ivin if in absɔlɔb valyu stil de insay spɛshal — i fɔ gɛt atɛnshɔn. Dat sɛl kin gɛt prɔblɛm we i de mek am (we nɔ de wɛl) ɔ i kin ol kwik kwik wan (ilɛktrɔlayt nɔ de wok fayn). if yu nכto intanεt kכnsistεns analisis, we yu luk כnli pan agrεgεt strכng vכltεj, dεn kayn anomaly dεm ya de nia fכ no — agrεgεt vכltεj avεrej akraos כl di sεl dεm, we de diluyt eni singl anomaly.
Intanɛt rɛsistɛns tɛst mɛtɔd dɛn kin kategoriz bay tɛst kɔndishɔn ɛn akkuracy rikwaymɛnt. Di wan we simpul pas ɔl na di intanɛnt rɛsistɛns mita we yu kin ol wit yu an: ataya klip dɛn to di bateri tɛminal dɛn, prɛs di tɛst bɔtin, rid di valyu. Di bɛnifit dɛn na we i simpul, i nɔ gɛt bɔku mɔni, ɛn i nɔ gɛt ɔgzilari ikwipmɛnt; di bad tin dεm na singl-sεl-at-a-taym כpεreshכn, manual data rεkכdin, εn sεnsitiviti fכ ridin to klip kכntakt rεsistεns.
Di sɛkɔn kategori na lod-bɛs intanɛnt rɛsistɛns tɛst, inklud AC injɛkshɔn ɛn DC dischaj we dɛn de yuz. AC injεkshכn de fid wan sכmכl kכrεnt we dεn no na wan spεsifi k frikכnshכn (tipikli 1kHz) insay di bateri εn i de mεzj di AC vכltεj dכp fכ kכlkul rεsistεns. Advantej: nɔ rial bateri dischaj, ful onlayn; disavantej: de mכsu AC intanεt rεsistεns, we difrεnt frכm DC intanεt rεsistεns. DC dischaj de aplay shɔt tɛm DC lod (tipikli tɛns amp fɔ 100ms to 1 sɛkɔn) ɛn mɛzhɔ di vɔlɔt difrɛns bifo ɛn afta lod fɔ kɔlkul DC intanɛnt rɛsistɛns. Advantej: de mɛzhɔ tru DC intanɛnt rɛsistɛns; disavantej: de aplay wan lod, we gɛt sɔm intafɛreshɔn wit ɔnlayn ɔpreshɔn.
Di tɔd kategori na onlayn intanɛnt rɛsistɛns monitarin sistɛm dɛn: pɔrmɛnt sɛns dɛn we dɛn instɔl pan ɛni sɛl, data we dɛn kin transmit tru bɔs to wan monitarin ɔs. Advantej: 24/7 kɔntinyu fɔ monitar wit ɔtomɛtik rikodin ɛn analisis; disavantej: ay kɔst ɛn kɔmpleks instɔleshɔn, we fit ɔl fɔ ayest-rilaybiliti aplikeshɔn (data sɛnta, rel transit).
Di PK59C ɛn PK59D sidɔm bitwin di sɛkɔn ɛn tɔd kategori — hanheld divays dɛn we de yuz DC dischaj mɛzhɔmɛnt, we de gi akkuracy ɛn rilaybiliti fa ɔp di tipik AC-injɛkshɔn hanheld mita dɛn. Fɔ bɔku pan di tɛlikɔm bes steshɔn ɛn UPS mentenɛns sɛnɛriɔ, dis de ripresent di bɛst kɔst-ɛfɛktivnɛs rɛsɛshɔn.
Di rial valyu fɔ intanɛnt rɛsistɛns tɛst nɔ de insay wan mɛzhɔmɛnt bɔt na lɔng tɛm data akyumyuleshɔn ɛn tren analisis. Wan ridin de tɛl yu di stet we de naw; wan kɔntinyu tren de tɛl yu usay di bateri de go.
Di fawndeshɔn prɔsis na fɔ bil wan bateri wɛlbɔdi rɛkɔd. Afta ɛni tɛst, rikodɔ intanɛnt rɛsistɛns, vɔlɔt, tɛst de, ɛn ambiɛnt tɛmpracha fɔ ɛni sɛl. Test fɔ apin at le kwata, ɛvri mɔnt fɔ impɔtant tɛlikɔm sayt dɛn. Data fɔ plot as tɛm-siris kɔv fɔ ɛni sɛl. Wan sɛl we gɛt wɛlbɔdi de sho wan tin we de go ɔp smɔl smɔl ɛn we nɔ de chenj. sεl we in rεsistεns de jomp wan wan insay sכt tεm — ivin if di absכlut valyu stil lכw — de sho se wan anomaly we nid fכ invεstigat mכr.
Set预警 thresholds na di nɛks ki step. Threshold nɔ kin bi wan-sayz-fit-ɔl — difrɛn kayn bateri, manifakta, ɛn kɔnstrɔkshɔn prɔses gɛt difrɛn absɔlɔb rɛsistɛns valyu ɛn rit fɔ chenj. Wan prɛktikal we: yuz di nyu-bateri faktri valyu as di beslayn, sɛt tu alert lɛvɛl — WƆNIN na 1.5× faktri valyu, AKSHƆN na 2× faktri valyu. If di faktri data nɔ de, yuz di avɛrej fɔ wan sem-batch nyu bateri batch as rɛfrɛns, ɔ sɛt di wɔnin trɛshɔld na 1.3× di rɛsistɛns we smɔl pas ɔl insay di sem grup.
Advans tren analisis de mek yu ebul fɔ prɛdikshɔn layf we lɛf. Bay we yu fit di rεsistεns-vεrs-taym kεrv, wan kin εkstrapol di tεm pכynt we rεsistεns rich di fεil thrεshold, prεdikt rεmεnεnt sεvis layf. Dis we fɔ du tin dɔn ɔlrɛdi de na big bateri bank manejmɛnt insay di tɛlikɔm ɛn data sɛnta industri, bɔt i nɔ standad yet na smɔl mentenɛns tim dɛn. As tɛst data de gɛda ɛn analisis tul dɛn de impɔtant, dis prɛdiktiv we fɔ du tin go bi industri standad smɔl smɔl.
Fɔ dɔn, dɛn fɔ jɔyn di intanɛnt rɛsistɛns data wit ɔda data. Resistance rise na wan lida indikɛtɔ fɔ ol, bɔt nɔto di wan nɔmɔ. Ambiɛnt tɛmpracha, flot vɔlɔt istri, chaj-dischaj saykl, ɛn string kɔnsistɛns data, we dɛn jɔyn, de mek dɛn ebul fɔ disayd fɔ du di rayt mentenɛns. Fɔ ɛgzampul, wan sɛl we gɛt ɛlevɛt rɛsistɛns we dɛn dɔn kɔntinyu fɔ ɔvachaj bak kin bi chaj mɛnejɛmɛnt prɔblɛm pas fɔ mek di bateri nɔ wok — fɔ riples am go west wan risɔs we dɛn stil de yuz.
Fɔ mentenɛns tim dɛn, fɔ intagret intanɛnt rɛsistɛns tɛst insay rutin prosidyuz nɔ nid ɛni ɔda ikwipmɛnt invɛstmɛnt — if ɛni mɔdel frɔm PK59A to PK59D dɔn ɔlrɛdi gɛt, di intanɛnt rɛsistɛns tɛst kapabiliti de. Wetin nid na fɔ mek dɛn mek tɛst wokflɔ ɛn data manejmɛnt sistem.
Rikɔmɛnd tɛst wokflɔ: mɛzhɔ intanɛnt rɛsistɛns as beslayn na nyu bateri akseptɛns; tɛst wan wan tɛm we dɛn de du savis (ɛvri kwata, ɛvri mɔnt fɔ sayt dɛn we impɔtant); mכsu εvri sεl wan wan dεn di agrεgεt; rεkכd intanεt rεsistεns, vכltεj, εn ambiεnt tεmprachכ fכ εvri tεst; flag sεl dεm wit abnכmal rεsistεns fכ fכlכp; jenarayz wan kwata bateri wɛlbɔdi ripɔt.
Fɔ data manejmɛnt, yuz Excel fɔ smɔl skel (tɛn to ɔndrɛd sɛl) wit wan disiplin tebul strɔkchɔ ɛn ɔpdet prɔses. Fɔ midul skel (ɔndrɛd to tawzin), tink bɔt pɔshɔnal bateri mentenɛns manejmɛnt softwe. Fɔ big skel (tawzin to tɛn tawzin), wan sɛntralayz mentenɛns manejmɛnt sistɛm we dɛn intagret wit monitarin ɔs ɛn SCADA na in fayn.
Fɔ di wan dɛn we de bay we stil de na di sɛlɛkshɔn faz, prɔyoritɛt divays dɛn we de sɔpɔt intanɛnt rɛsistɛns tɛst. Pan ɔl we wan intanɛnt rɛsistɛns mita de kɔst mɔ pas wan simpul vɔltmita, di ritɔn pan invɛstmɛnt kin bɔku we dɛn mɛzhɔ am agens di dawt tɛm lɔs dɛn we dɛn kin avɔyd we di bateri nɔ wok. Wan singl tɛlikɔm bays steshɔn bateri we nɔ wok kin mek tɛn tawzin to ɔndrɛd tawzin lɔs pan biznɛs intarapshɔn, we wan intanɛnt rɛsistɛns tɛsta kin kɔst sɔm tawzin nɔmɔ. View the Battery Test Instruments Collection
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